Alongside its groundbreaking V10 BV-NAND flash and zHBM memory concepts, Samsung showcased several other advanced memory and storage solutions for future AI data centers. These products aim to deliver faster performance and improved power efficiency, enabling faster AI processing.
zNAND-O is Samsung's newest high-performance 3D NAND flash memory concept, designed specifically for edge AI computing. It is being developed in four-layer and eight-layer versions and aims to deliver lower latency and higher data-transfer speeds than current NAND flash chips.
Its compact design could make it suitable for mobile devices, including laptops, smartphones, and tablets, as well as robotics applications.
Samsung also showcased its LPDDR5X-PIM memory chip, which it calls the industry's first LPDDR memory with built-in data processing. Since processing takes place within the memory chip, it can reduce data movement and improve energy efficiency.
The PM1763 is Samsung's high-performance enterprise SSD, while the BM1773 is designed for high storage capacity. Both eSSDs were showcased at the FMS 2026 expo.
Samsung also said it is the world's only company that can design and manufacture memory and storage chips while also offering contract chip manufacturing on advanced process nodes, including 4nm and below. This allows the company to offer customers a one-stop solution across memory, logic, foundry, and packaging.
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